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MJE350 Plastic Medium Power PNP Silicon Transistor
This device is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
Features http://onsemi.com
* High Collector-Emitter Sustaining Voltage - * * *
VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc Excellent DC Current Gain - hFE = 30-240 @ IC = 50 mAdc Plastic Thermopad Package Pb-Free Package is Available*
0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS, 20 WATTS
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Emitter-Base Voltage Symbol VCEO VEB IC PD Value 300 3.0 500 Unit Vdc Vdc 3 TO-225 CASE 77 STYLE 1 21
I I II I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III II I II IIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIII I I II I IIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII II II I I II I II I IIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII
IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III III I I I IIIIIIIIIIIIIIIIIII III I I III I IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII III III I I IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII II II
Collector Current - Continuous mAdc Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 20 0.16 W mW/_C _C TJ, Tstg -65 to +150
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol qJC
Max
Unit
Thermal Resistance, Junction-to-Case
6.25
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
YWW JE350G
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min 300 - - Max - Unit Vdc OFF CHARACTERISTICS
Y WW JE350 G
= Year = Work Week = Device Code = Pb-Free Package
Collector-Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) Collector Cutoff Current (VCB = 300 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)
VCEO(sus) ICBO IEBO
100 100
mAdc mAdc
ORDERING INFORMATION
Device MJE350 MJE350G Package TO-225 TO-225 (Pb-Free) Shipping 500 Units/Box 500 Units/Box
ON CHARACTERISTICS
DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc)
hFE
30
240
-
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2007
January, 2007 - Rev. 14
1
Publication Order Number: MJE350/D
MJE350
200 TJ = 150C 25C -55 C 1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 10 V
hFE , DC CURRENT GAIN
100 70 50 30 20
0.4
IC/IB = 10
VCE = 2.0 V VCC = 10 V 20 30 50 70 100 200 300 500
0.2 VCE(sat) 0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC/IB = 5.0 200 300 500
10 5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. "On" Voltages
V, TEMPERATURE COEFFICIENTS (mV/C)
IC, COLLECTOR CURRENT (mA)
1000 700 500 300 200 100 70 50 30 20 10 20 1.0 ms dc
+1.2 +0.8 +0.4 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 5.0 7.0 10 qVB for VBE -55 C to +25C 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 300 500 *qVC for VCE(sat) *APPLIES FOR IC/IB < hFE/4 +100 C to +150C +25 C to +100C
100 ms
-55 C to +25C +25 C to +150C
500 ms TJ = 150C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C SECOND BREAKDOWN LIMITED 30 50 70 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Active-Region Safe Operating Area
Figure 4. Temperature Coefficients
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
20 PD, POWER DISSIPATION (WATTS) 16
12
8.0
4.0
0
0
20
40 60 80 100 120 TC, CASE TEMPERATURE (C)
140
160
Figure 5. Power Derating
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MJE350
PACKAGE DIMENSIONS
TO-225 CASE 77-09 ISSUE Z
-B- U Q -A-
123 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 ---
F M
C
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M M
A
M
B
M
B
M
DIM A B C D F G H J K M Q R S U V
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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MJE350/D

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